Download PDF by Alain C. Diebold: Handbook of Silicon Semiconductor Metrology

By Alain C. Diebold

ISBN-10: 0585418322

ISBN-13: 9780585418322

ISBN-10: 0824705068

ISBN-13: 9780824705060

Containing greater than three hundred equations and approximately 500 drawings, images, and micrographs,this reference surveys key components reminiscent of optical measurements and in-line calibration equipment. It describes cleanroom-based size know-how used throughout the manufacture of silicon built-in circuits and covers model-based, severe size, overlay, acoustic movie thickness, dopant dose, junction intensity, and electric measurements; particle and disorder detection; and flatness following chemical mechanical sprucing. supplying examples of well-developed metrology potential, the booklet makes a speciality of metrology for lithography, transistor, capacitor, and on-chip interconnect approach applied sciences.

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860 from the arrays. 997. From the data shown in Figure 12, use of Eq. 59 nm. The same analysis methodology was applied to C-V data sets from n þ =p polysilicon-gate capacitors on MOSCAP reference wafers, as shown in Figure 13. 23 nm. As a result of the process flow for this wafer type, the effects of adsorbed contaminant layers and nonstoichiometric oxide layers should have a minimal impact on this oxide-thickness metric. The combination of optical and electrical metrology techniques has enabled the development of well-characterized and meaningful 2-nm gate oxide standards.

Static repeatability may be obtained by loading a wafer into the ellipsometer and making a series of consecutive measurements at one site. Focusing of the ellipsometer occurs prior to the first measurement only. Thirty measurements in rapid succession might typically be performed. Variation introduced by movement of the stage is thus eliminated. Dynamic repeatability ðsDR ) is the standard deviation of measurements obtained from cycling the wafer into and out of the ellipsometer. Measurements are performed over a short period of time (typically tens of minutes) by loading and unloading the wafer 30 times.

These samples experienced a thermal treatment of 900 C for 30 minutes during the poly-doping step. Thus, the thermal history of blanket and capacitor structures was different. The specific sampling schemes used in this study included several short-term capability studies to obtain an initial evaluation of static repeatability, dynamic repeatability, and 28 Hayzelden precision. These experiments were followed by a 14-day stability study. On each day, nominally 20-, 30-, 40-, and 100-A˚ oxide wafers were measured, with five repetitions on each of five cycles.

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Handbook of Silicon Semiconductor Metrology by Alain C. Diebold

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