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36'37 Doping of AlGaN alloys grown by HVPE is not investigated in details yet. The fact that AlGaN/AlGaN p-n heterostructures are working as 300 nm UV light emitters38 indicates that p-type doping is possible at least up to 27 mol. % of A1N. We may conclude that A1N and AlGaN epitaxial layers can be grown by HVPE with a reasonable composition control and crystal quality. However, HVPE growth of AlGaN and A1N layers is investigated much less than HVPE growth of GaN. 0 AIN mole fraction Fig. 19. xN optical band gap on AIN mole fraction (x) derived from room temperature photoluminescence (triangles) and optical transmission data (circles).

1. History of Reactor Development for Ill-Nitrides The MOVPE of Ill-Nitrides became important in the early 90s when I. Akasaki 1 and S. Nakamura 2 first demonstrated Nitride based light emitting diodes (LEDs). These results motivated a lot of research groups to embark on research into the MOVPE of Ill-Nitrides. These groups often started with modified reactors, which were originally used for the 41 42 Dauelsberg, Schineller, Kaeppeler growth of GaAs or InP based materials. The precursors used for the group III component when growing Ga (Al, In) N are mainly the same as used for the growth of GaAs or InP based materials.

Of A1N. We may conclude that A1N and AlGaN epitaxial layers can be grown by HVPE with a reasonable composition control and crystal quality. However, HVPE growth of AlGaN and A1N layers is investigated much less than HVPE growth of GaN. 0 AIN mole fraction Fig. 19. xN optical band gap on AIN mole fraction (x) derived from room temperature photoluminescence (triangles) and optical transmission data (circles). 7. InN and InGaN Layers Results on HVPE growth of InN and InGaN materials are limited.

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Radiologie by Oestmann


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