New PDF release: Silicon carbide power devices

By B Jayant Baliga

ISBN-10: 9812566058

ISBN-13: 9789812566058

ISBN-10: 9812774521

ISBN-13: 9789812774521

Strength semiconductor units are commonplace for the keep watch over and administration of electric strength. The bettering functionality of strength units has enabled rate mark downs and potency raises leading to reduce fossil gas utilization and no more environmental toxins. This e-book offers the 1st cohesive remedy of the physics and layout of silicon carbide energy units with an emphasis on unipolar buildings. It makes use of the result of vast numerical simulations to clarify the working rules of those vital devices.
Contents: fabric homes and know-how; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor box impression Transistors; The Baliga-Pair Configuration; Planar strength MOSFETs; Shielded Planar MOSFETs; Trench-Gate energy MOSFETs; Shielded Trendch-Gate MOSFETs; cost Coupled buildings; fundamental Diodes; Lateral excessive Voltage FETs; Synopsis.

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The reader should refer to the proceeding of the conferences on 'Silicon Carbide and Related Materials' for an abundance of information on this topic. Although room temperature ion implantation can be successful, it has been found that hot-implantation produces a higher degree of impurity activation and a smaller number of defects. The hot-implants are usually performed in the 500 °C range followed by anneals performed at between 1200 and 1600 °C. At above 1600 °C, degradation of the silicon carbide surface is observed due to sublimation or evaporation19,25.

1 —* * ^^ * • 300 6H- SiC . ,* ^ 4 H SiC > 350 400 450 500 550 Temperature (K) 600 Fig. 3 Intrinsic Carrier Concentration. 650 700 Material Properties and Technology 19 For silicon, the intrinsic carrier concentration becomes equal to a typical doping concentration of 1 x 1015 cm'3 at a relatively low temperature of 540 °K or 267 °C. 9 x 107 cm"3 even at 700 °K or 427 °C. The development of mesoplasmas has been associated with the intrinsic carrier concentration becoming comparable to the doping concentration5.

It can be seen that the onset of significant generation of carriers by impact ionization occurs at much larger electric fields in 4H-SiC when compared with silicon. As a consequence, breakdown in 4H-SiC devices occurs when the electric fields are in the range of 2-3 x 106 V/cm - an order of magnitude larger than that for silicon. This implies a much larger critical electric field Ec 23 Material Properties and Technology for breakdown for 4H-SiC resulting in a big increase in the Baliga's Figure of Merit.

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Silicon carbide power devices by B Jayant Baliga


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