Download e-book for iPad: Theory of defects in semiconductors by David A. Drabold, Stefan Estreicher

By David A. Drabold, Stefan Estreicher

ISBN-10: 3540334009

ISBN-13: 9783540334002

Semiconductor technology and expertise is the artwork of illness engineering. The theoretical modeling of defects has greater dramatically over the last decade. those instruments are actually utilized to quite a lot of fabrics matters: quantum dots, buckyballs, spintronics, interfaces, amorphous platforms, and so forth. This quantity offers a coherent and targeted description of the sphere, and brings jointly leaders in theoretical study. trendy cutting-edge in addition to tomorrows instruments are mentioned: the supercell-pseudopotential approach, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature remedies, and so on. A wealth of functions are incorporated, from aspect defects to wafer bonding or the propagation of dislocation.

Show description

Read or Download Theory of defects in semiconductors PDF

Best electronics: radio books

Marie Curie and the science of radioactivity - download pdf or read online

Examines the lifetime of the Polish-born scientist who, along with her husband Pierre, was once offered a 1903 Nobel Prize for locating radium.

Read e-book online Radar Made Easy PDF

This present day, radar in a single shape or one other is probably going to show up all over: on the street, on the waterfront, in an underground motor-road. by way of some distance the widest use of radar is made by means of the army and scientists. In all of those fields millions upon hundreds of thousands of radar units are at paintings. a few of them are sufficiently small to be geared up into spectacles, others weigh countless numbers of plenty.

Additional resources for Theory of defects in semiconductors

Sample text

Pearton, in GaN and Related Materials, ed. J. Pearton (Gordon and Breach, Amsterdam, 1997), p. 333 15. F. Jiang, M. Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, and J. Kalejs, Appl. Phys. Lett. 83, 931 (2003) 16. G. Davies, Phys. Rep. 176, 83 (1989) 17. D. Watkins, in Deep Centers in Semiconductors, ed. T. Pantelides (Gordon and Breach, New York, 1986), p. 147 18. V. N. Nevinnyi, Physica B 170, 155 (1991) and Mat. Sci. Engr. B 36, 133 (1996) 19. T. Pantelides, in Deep Centers in Semiconductors, ed.

Rev. Lett. 48, 1425 (1982) 81. R. Car and M. Parrinello, Phys. Rev. Lett. 55, 2471 (1985) 82. O. J. Niklewski, Phys. Rev. B 40, 3979 (1989) 83. A. Zunger and A. Katzir, Phys. Rev. B 11, 2378 (1975) 84. G. Louie, M. R. L. Cohen, Phys. Rev. B 13, 1654 (1976) 85. W. L. Cohen, and C. Kittel, Phys. Rev. B 20, 5050 (1979) 86. J. H. Van Vleck, Phys. Rev. 49 232 (1936). 87. 1, the associated factorial growth in complexity, and its dire implications to attempts to compute many-particle states for large systems.

Efficient numerical techniques such as the fast Fourier transform (FFT) can be used. The replacement of the all-electron potential with a PP is, however, a non-trivial task where a balance has to be struck between optimal transferability (accurate reproduction of all-electron atom behavior) and computational efficiency (slow spatial variability). Several methods are popular for generating PPs. They include the generalized norm-conserving pseudopotentials of Hamann, [40] Troullier and Martins, [41] Hartwigsen et al.

Download PDF sample

Theory of defects in semiconductors by David A. Drabold, Stefan Estreicher


by Donald
4.1

Rated 4.96 of 5 – based on 23 votes