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By Rice O. K.

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The capacitances C and C are given by Eqs. 21),   respectively. The capacitance C is given by  K(k ) K(k )  ;  . 51) is derived and is as follows: : 1 ; q ( 9 1) ; q ( 9 ). 52) The partial filling factors q and q are   K(k )  q :  K(k  )  K(k )  q :  K(k  )  K(k ) K(k ) \   ; , K(k  ) K(k  )   K(k ) K(k ) \   ; . K(k  ) K(k  )   60 Z :  ( K(k ) K(k )  . 55) The height of the shield above a certain height has negligible effect on the propagation characteristics and hence its presence can be ignored.

11 presents the effect of metal thickness on and Z of conventional CPW. 1(a) and (b). These two CPW structures are designated as sandwiched CPW and CPW on a doublelayer substrate respectively. In these figures the CPW center strip conductor width S is equal to 2a and the distance of separation between the two semi-infinite ground planes in 2b. Consequently the slot width W is equal to b 9 a. The two dielectric substrate thicknesses are designated as h , h and as   h , h 9 h in the case of sandwiched CPW and CPW on a double-layer    substrate, respectively.

In the numerical model the CPW is assumed to be housed inside a metal enclosure that is held at zero potential. Further the CPW conductor thickness, which is much smaller than the substrate thickness, is assumed to be zero. The numerical model is validated by comparing the computed Z with the experimentally measured  values. 61 mm. A TDR is used to measure the FREQUENCY-DEPENDENT TECHNIQUES FOR IMPEDANCE 33 Z . The maximum difference between the measured and modeled Z values is   3 percent [16].

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Types of Unimolecular Reactions by Rice O. K.

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